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Schottky Barrier Diodes (SBD)
MA2HD08
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
3.2 0.3 0 to 0.05
* Small and thin Half New Mini-power package * Allowing to rectify under (IF(AV) = 1 A) condition
1.9 0.3
2
1
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 -40 to +125 Unit V
0.9 0.4 0.9 0.4 3.8 0.2 0.25 - 0.05 1.85 0.3
+ 0.1
V A A C C
1 : Anode 2 : Cathode Half New Mini-Power Type Package
Marking Symbol: PP
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25C 3C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 50 15 Conditions Min Typ Max 13 0.30 Unit mA V pF ns
Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument
Bias Application Unit N-50BU tr
Input Pulse tp 10% t IF
Output Pulse
trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
1.0 0.2
I Features
1
MA2HD08
IF V F
10 1 Ta = 125C
1
Schottky Barrier Diodes (SBD)
IR V R
10-1
Forward current IF (A)
10-1 25C
100C 75C 50C
Reverse current IR (A)
Ta = 85C 10-2
10-2
10-3
25C
10-3
10-4
10-4
10-5
0
0.1
0.2
0.3
0.4
0.5
0.6
10-5
0
5
10
15
20
25
30
Forward voltage VF (V)
Reverse voltage VR (V)
2

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